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Multi-scale electrical response of silicon nitride/multi-walled carbon nanotubes composites

  • J. González-Julián
  • , Y. Iglesias
  • , A. C. Caballero
  • , M. Belmonte
  • , L. Garzón
  • , C. Ocal
  • , P. Miranzo
  • , M. I. Osendi

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

Resumen

Dense silicon nitride (Si3N4) composites with various amounts (0-8.6vol%) of multi-walled carbon nanotubes (MWCNTs) are electrically characterised by combining macroscopic dc-ac and nanoscale conductive scanning force microscopy (C-SFM) measurements. In this way, a coherent picture of the dominant charge transport mechanisms in Si3N4/MWCNTs composites is presented. A raise of more than 10 orders of magnitude in the electrical dc conductivity compared to the blank specimen is measured for MWCNTs contents above 0.9vol%. Semiconductor and metallic-like behaviours are observed depending on both the temperature and the MWCNTs content. Macroscopic measurements are further supported at the nanoscale by means of C-SFM. The metallic-type conduction is associated to charge transporting along the nanotube shells, whereas the semiconductor behaviour is linked to hopping conduction across nanotube-nanotube contacts and across intrinsic defect clusters within the nanotubes. © 2010 Elsevier Ltd.
Idioma originalInglés
Páginas (desde-hasta)60-66
Número de páginas7
PublicaciónComposites Science and Technology
DOI
EstadoPublicada - 1 ene. 2011
Publicado de forma externa

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