TY - JOUR
T1 - Multi-scale electrical response of silicon nitride/multi-walled carbon nanotubes composites
AU - González-Julián, J.
AU - Iglesias, Y.
AU - Caballero, A. C.
AU - Belmonte, M.
AU - Garzón, L.
AU - Ocal, C.
AU - Miranzo, P.
AU - Osendi, M. I.
PY - 2011/1/1
Y1 - 2011/1/1
N2 - Dense silicon nitride (Si3N4) composites with various amounts (0-8.6vol%) of multi-walled carbon nanotubes (MWCNTs) are electrically characterised by combining macroscopic dc-ac and nanoscale conductive scanning force microscopy (C-SFM) measurements. In this way, a coherent picture of the dominant charge transport mechanisms in Si3N4/MWCNTs composites is presented. A raise of more than 10 orders of magnitude in the electrical dc conductivity compared to the blank specimen is measured for MWCNTs contents above 0.9vol%. Semiconductor and metallic-like behaviours are observed depending on both the temperature and the MWCNTs content. Macroscopic measurements are further supported at the nanoscale by means of C-SFM. The metallic-type conduction is associated to charge transporting along the nanotube shells, whereas the semiconductor behaviour is linked to hopping conduction across nanotube-nanotube contacts and across intrinsic defect clusters within the nanotubes. © 2010 Elsevier Ltd.
AB - Dense silicon nitride (Si3N4) composites with various amounts (0-8.6vol%) of multi-walled carbon nanotubes (MWCNTs) are electrically characterised by combining macroscopic dc-ac and nanoscale conductive scanning force microscopy (C-SFM) measurements. In this way, a coherent picture of the dominant charge transport mechanisms in Si3N4/MWCNTs composites is presented. A raise of more than 10 orders of magnitude in the electrical dc conductivity compared to the blank specimen is measured for MWCNTs contents above 0.9vol%. Semiconductor and metallic-like behaviours are observed depending on both the temperature and the MWCNTs content. Macroscopic measurements are further supported at the nanoscale by means of C-SFM. The metallic-type conduction is associated to charge transporting along the nanotube shells, whereas the semiconductor behaviour is linked to hopping conduction across nanotube-nanotube contacts and across intrinsic defect clusters within the nanotubes. © 2010 Elsevier Ltd.
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U2 - 10.1016/j.compscitech.2010.10.004
DO - 10.1016/j.compscitech.2010.10.004
M3 - Article
SN - 0266-3538
SP - 60
EP - 66
JO - Composites Science and Technology
JF - Composites Science and Technology
ER -